PART |
Description |
Maker |
T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
TGA2237-15 |
0.03 2.5GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2237-SM TGA2237-SM-15 |
0.03 2.5GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管(功100W - 28V 900MHz时)(镀金多用的DMOS射频硅场效应管(功率100W - 28V 900MHz的) TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd. TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|